LaAlO3, (100) Orn. 1" x 0.5mm wafer 1 SP - LAOa25D05C1 Au/Gold Material: LiNiCoMnO2

Material:  LiNiCoMnO2

Resistivity: 7-10  ohm/sq

temperature extremes (-13°F to +446°F)

200&450 Mesh or Compact Ultrasonic Sieving System - MSK-SYU-3 to filter the powder (See Pic

EPI polished  on one side or two sides to Ra < 10 Å

LaAlO3, (100) Orn. 1" x 0.5mm wafer 1 SP - LAOa25D05C1 Au/Gold Material: LiNiCoMnO2LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 1" dia + 0. 5 mm x 0. 5 thickness + 0. 05 mm Wafer Orientation: (100) +