Ge Wafer (100) 2" dia x 0.5 mm, 1SP, P type ( Ga doped), resistivity: 0.0007-0.002 ohm-cm Li1.5Al0.5Ge1.5P3O12 controlled application of negative pressure

controlled application of negative pressure and safe bleeding

of the bottom can: 22mm

BK7 (Schott) - glass substrates

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Ge Wafer (100) 2" dia x 0.5 mm, 1SP, P type ( Ga doped), resistivity: 0.0007-0.002 ohm-cm Li1.5Al0.5Ge1.5P3O12 controlled application of negative pressureGe Wafer Specification Growing Method: CZ Orientation: (100) + 0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: One side epi polished Surface roughness: < 8 A ( by AFM) Doping: Ga Doped Conductor type: P type Resistivity: 0. 0007 0. 002 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: