4H-SiC Epitaxial Film on 4H-SiC (0001) w/ 8 degree off, P type,2"dia.x0.33mm, carrier conc. 1.4 E17/cc, 2sp, thickness 4.3um-Fm4HSCon4HSC50d03C2deg8US Accessories Fit EQ-OTF-1200X-80

Fit EQ-OTF-1200X-80

which has better thermo-conductivity and provides better temperature uniformity compared with quartz tube

The testing software (TC5

Small particles may slip into the gap of the die parts and damage the sleeve during the compression

Length: 60mm ±1

4H-SiC Epitaxial Film on 4H-SiC (0001) w/ 8 degree off, P type,2"dia.x0.33mm, carrier conc. 1.4 E17/cc, 2sp, thickness 4.3um-Fm4HSCon4HSC50d03C2deg8US Accessories Fit EQ-OTF-1200X-80Specifications Film: 4H SiC (0001) Film target thickness: 4. 3 microns with (thickness acceptation range) + 10% Film target doping layer: 1. 4E17 cc with (doping acceptation range) +0% 30% Conductive Type P type with Surface finish Both sides will be polished after deposition, Both Front and Backside Epiwafer polishing with Ra or RMS < 5 Angstrom Substrate: 4H SiC (0001) Prime grade Off axis: miscut 8. 0 + 0. 5 degree Prime Grade: with FWHM 20 arc