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InAs (100), P Type, Zn doped 10x10 x 0.5 mm, one side polished Orientation M-Plane (1-100) Conductive type: Si n-type
InAs (100), P Type, Zn doped 10x10 x 0.5 mm, one side polished Orientation M-Plane (1-100) Conductive type: Si n-type
$148.35
Description
Conductive type: Si n-type
Support for Windows 10 and 11 (64 bit only)
OD 54mm ID 40mm Length 1000mm
EQ-HSC-8 is an 8-channel split coin cell kit designed for high-throughput R&D battery material testing and screening
TTV: < =15um
InAs (100), P Type, Zn doped 10x10 x 0.5 mm, one side polished Orientation M-Plane (1-100) Conductive type: Si n-typeInAs wafer P Type, Zn doped Size: 10x10x0. 5mm Orientation: <100> + 0. 50 Polishing: one side polishd Resistivities: 0. 0084 ohm cm Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat SEMI Doping Zn doped Conductivity type P type Carrier Concentration 5. 3E18 cm3 Mobility 126 cm2 V. S Resistivity 0. 0084 ohm cm EPD 1. 2E4 cm 2
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, P Type, Zn doped 10x10 x 0.5 mm, one side polished Orientation M-Plane (1-100) Conductive type: Si n-type){kind=link}
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