GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 2sp - GAUe50D05C2-US Diamond on Silicon wafer One pack of 48173 accessories

One pack of 48173 accessories

Gd3Sc2Ga3O12

Perfect for ferroelectric epitaxial thim film

Belt driven platen with stable and quiet operation

Motor speed: 10 - 70 rpm programmable

GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 2sp - GAUe50D05C2-US Diamond on Silicon wafer One pack of 48173 accessoriesGaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 2" dia x 0. 5mm Polishing: two sides polished Doping: undoped, Conductor type: SI (Semi insulating ) Carrier Concentration: N A Mobility: 3710 6230 cm^2 V. S EPD: N A Resistivity: (0. 8 4. 8)E8 ohm. cm Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces