C10200 - SEMI C102 - Guide for Reporting Density and Porosity of Chemical Mechanical Planarization (CMP) Polishing Pads Used in Semiconductor Manufacturing StdPbc-0094 Flats are usually specified with

Flats are usually specified with respect to a low-index plane

the technical architecture identifies those crucial technical requirements that should be considered by both CIM software suppliers and consumers

Since a 3D stacking process may include wafers from multiple fabrication facilities

This Document is not intended to describe a measurement procedure

Nanotopography on a wafer surface prior to CMP processes can result in variations in post-CMP dielectric thickness with potential negative consequences for circuit performance and yield

C10200 - SEMI C102 - Guide for Reporting Density and Porosity of Chemical Mechanical Planarization (CMP) Polishing Pads Used in Semiconductor Manufacturing StdPbc-0094 Flats are usually specified withThis Standard will provide a guide for consistent measurements and reporting measurement conditions of density of chemical mechanical planarization (CMP) pads. This Standard recommends using additional metrologies for measurements of CMP pad density, such as liquid or gas pycnometer metrologies. This Standard does not recommend stopping reporting density parameters using industry traditional metrology based on determining the weight and geometry of